High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures

Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (V th ) higher than +3 V and drain current density (I d ) higher than 600mA/mm was obtained at room temperature. Interestingly, I d did not decrease much at high temperatures, i.e., Id decreased from 610 to 590mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.

元の言語英語
記事番号08JN18
ジャーナルJapanese Journal of Applied Physics
52
発行部数8 PART 2
DOI
出版物ステータス出版済み - 8 1 2013
外部発表Yes

Fingerprint

High electron mobility transistors
field effect transistors
augmentation
Temperature
threshold voltage
Drain current
Threshold voltage
current density
Current density
room temperature
Chemical analysis
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures. / Maeda, Narihiko; Hiroki, Masanobu; Sasaki, Satoshi; Harada, Yuichi.

:: Japanese Journal of Applied Physics, 巻 52, 番号 8 PART 2, 08JN18, 01.08.2013.

研究成果: ジャーナルへの寄稿記事

@article{071275d6e00e44848e46d611a69745ad,
title = "High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures",
abstract = "Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (V th ) higher than +3 V and drain current density (I d ) higher than 600mA/mm was obtained at room temperature. Interestingly, I d did not decrease much at high temperatures, i.e., Id decreased from 610 to 590mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.",
author = "Narihiko Maeda and Masanobu Hiroki and Satoshi Sasaki and Yuichi Harada",
year = "2013",
month = "8",
day = "1",
doi = "10.7567/JJAP.52.08JN18",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "8 PART 2",

}

TY - JOUR

T1 - High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Sasaki, Satoshi

AU - Harada, Yuichi

PY - 2013/8/1

Y1 - 2013/8/1

N2 - Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (V th ) higher than +3 V and drain current density (I d ) higher than 600mA/mm was obtained at room temperature. Interestingly, I d did not decrease much at high temperatures, i.e., Id decreased from 610 to 590mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.

AB - Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (V th ) higher than +3 V and drain current density (I d ) higher than 600mA/mm was obtained at room temperature. Interestingly, I d did not decrease much at high temperatures, i.e., Id decreased from 610 to 590mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.

UR - http://www.scopus.com/inward/record.url?scp=84883186364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883186364&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.08JN18

DO - 10.7567/JJAP.52.08JN18

M3 - Article

AN - SCOPUS:84883186364

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JN18

ER -