High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Fumimasa Horikiri, Tomoyuki Ichikawa, Atsushi Kaimai, Keiji Yashiro, Hiroshige Matsumoto, Tatsuya Kawada, Junichiro Mizusaki

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

元の言語英語
ホスト出版物のタイトルHigh Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium
編集者E. Opila, T. Maruyama, T. Narita, E. Wuchina, J. Fergus, J. Mizusaki, D. Shifler
ページ203-209
ページ数7
PV 2004-16
出版物ステータス出版済み - 2004
外部発表Yes
イベント206th ECS Meeting - Honolulu, HI, 米国
継続期間: 10 3 200410 8 2004

その他

その他206th ECS Meeting
米国
Honolulu, HI
期間10/3/0410/8/04

Fingerprint

Photovoltaic effects
Tin oxides
Indium
Partial pressure
Temperature
Oxygen
Pulsed laser deposition
Energy conversion
Ultraviolet radiation
Energy gap
Single crystals
Wavelength
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Horikiri, F., Ichikawa, T., Kaimai, A., Yashiro, K., Matsumoto, H., Kawada, T., & Mizusaki, J. (2004). High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . : E. Opila, T. Maruyama, T. Narita, E. Wuchina, J. Fergus, J. Mizusaki, & D. Shifler (版), High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium (巻 PV 2004-16, pp. 203-209)

High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . / Horikiri, Fumimasa; Ichikawa, Tomoyuki; Kaimai, Atsushi; Yashiro, Keiji; Matsumoto, Hiroshige; Kawada, Tatsuya; Mizusaki, Junichiro.

High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. 版 / E. Opila; T. Maruyama; T. Narita; E. Wuchina; J. Fergus; J. Mizusaki; D. Shifler. 巻 PV 2004-16 2004. p. 203-209.

研究成果: 著書/レポートタイプへの貢献会議での発言

Horikiri, F, Ichikawa, T, Kaimai, A, Yashiro, K, Matsumoto, H, Kawada, T & Mizusaki, J 2004, High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . : E Opila, T Maruyama, T Narita, E Wuchina, J Fergus, J Mizusaki & D Shifler (版), High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. 巻. PV 2004-16, pp. 203-209, 206th ECS Meeting, Honolulu, HI, 米国, 10/3/04.
Horikiri F, Ichikawa T, Kaimai A, Yashiro K, Matsumoto H, Kawada T その他. High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . : Opila E, Maruyama T, Narita T, Wuchina E, Fergus J, Mizusaki J, Shifler D, 編集者, High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. 巻 PV 2004-16. 2004. p. 203-209
Horikiri, Fumimasa ; Ichikawa, Tomoyuki ; Kaimai, Atsushi ; Yashiro, Keiji ; Matsumoto, Hiroshige ; Kawada, Tatsuya ; Mizusaki, Junichiro. / High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. 編集者 / E. Opila ; T. Maruyama ; T. Narita ; E. Wuchina ; J. Fergus ; J. Mizusaki ; D. Shifler. 巻 PV 2004-16 2004. pp. 203-209
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abstract = "High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt{\%} Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.",
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AU - Horikiri, Fumimasa

AU - Ichikawa, Tomoyuki

AU - Kaimai, Atsushi

AU - Yashiro, Keiji

AU - Matsumoto, Hiroshige

AU - Kawada, Tatsuya

AU - Mizusaki, Junichiro

PY - 2004

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N2 - High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

AB - High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

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