抄録
A marked improvement in the thermoelectric performance of dense ZnO ceramics is achieved by employing a third element as a co-dopant with Al. Dual doping of ZnO with Al and Ga results in a drastic decrease in the thermal conductivity of the oxide, while the decrease in the electrical conductivity is relatively small. With the aid of a significant enhancement in the thermopower, the dually doped oxide shows thermoelectric figure of merit values, ZT, values of 0.47 at 1000 K and 0.65 at 1247 K at the composition Zn 0.96Al 0.02Ga 0.02O. These results appear to be the highest ZT values so far reported for bulk n-type oxides. Microscopic observation of the samples reveals a granular texture in the densely sintered oxide matrix, suggesting that considerable reduction of the thermal conductivity while maintaining high electrical conductivity could be achieved by such a bulk nanocomposite structure in the samples.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1234-1238 |
| ページ数 | 5 |
| ジャーナル | Journal of Electronic Materials |
| 巻 | 38 |
| 発行部数 | 7 |
| DOI | |
| 出版物ステータス | 出版済み - 7 1 2009 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
これを引用
High thermoelectric performance of dually doped ZnO ceramics. / Ohtaki, Michitaka; Araki, Kazuhiko; Yamamoto, Kiyoshi.
：: Journal of Electronic Materials, 巻 38, 番号 7, 01.07.2009, p. 1234-1238.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - High thermoelectric performance of dually doped ZnO ceramics
AU - Ohtaki, Michitaka
AU - Araki, Kazuhiko
AU - Yamamoto, Kiyoshi
PY - 2009/7/1
Y1 - 2009/7/1
N2 - A marked improvement in the thermoelectric performance of dense ZnO ceramics is achieved by employing a third element as a co-dopant with Al. Dual doping of ZnO with Al and Ga results in a drastic decrease in the thermal conductivity of the oxide, while the decrease in the electrical conductivity is relatively small. With the aid of a significant enhancement in the thermopower, the dually doped oxide shows thermoelectric figure of merit values, ZT, values of 0.47 at 1000 K and 0.65 at 1247 K at the composition Zn 0.96Al 0.02Ga 0.02O. These results appear to be the highest ZT values so far reported for bulk n-type oxides. Microscopic observation of the samples reveals a granular texture in the densely sintered oxide matrix, suggesting that considerable reduction of the thermal conductivity while maintaining high electrical conductivity could be achieved by such a bulk nanocomposite structure in the samples.
AB - A marked improvement in the thermoelectric performance of dense ZnO ceramics is achieved by employing a third element as a co-dopant with Al. Dual doping of ZnO with Al and Ga results in a drastic decrease in the thermal conductivity of the oxide, while the decrease in the electrical conductivity is relatively small. With the aid of a significant enhancement in the thermopower, the dually doped oxide shows thermoelectric figure of merit values, ZT, values of 0.47 at 1000 K and 0.65 at 1247 K at the composition Zn 0.96Al 0.02Ga 0.02O. These results appear to be the highest ZT values so far reported for bulk n-type oxides. Microscopic observation of the samples reveals a granular texture in the densely sintered oxide matrix, suggesting that considerable reduction of the thermal conductivity while maintaining high electrical conductivity could be achieved by such a bulk nanocomposite structure in the samples.
UR - http://www.scopus.com/inward/record.url?scp=67650423947&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67650423947&partnerID=8YFLogxK
U2 - 10.1007/s11664-009-0816-1
DO - 10.1007/s11664-009-0816-1
M3 - Article
AN - SCOPUS:67650423947
VL - 38
SP - 1234
EP - 1238
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 7
ER -