High voltage AlGaN/GaN power HEMT for power electronics applications

Ichiro Omura, Wataru Saito, Kunio Tsuda

研究成果: Contribution to conferencePaper査読

抄録

Very large number of power semiconductor devices(switch) are used in power electronics systems such as AC adapters for PCs, DC-DC converters for CPU, motor driver systems and induction heating systems for home appliances. This paper describes the possibility of GaN-HEMT for power electronics applications. The key design issue is to obtain high breakdown voltage of 600V with the HEMT structure. We employed the field plate structure to relax the electric field peak at the gate electrode edge. A high voltage DC-DC converter operation was also experimentally demonstrated showing possibility of the GaN-HEMT for power electronics applications.

本文言語英語
ページ386-394
ページ数9
出版ステータス出版済み - 12 1 2004
外部発表はい
イベントState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, 米国
継続期間: 10 3 200410 8 2004

会議

会議State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country米国
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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