High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

Masaki Tanaka, Kenji Higashida

研究成果: Contribution to journalArticle査読

16 被引用数 (Scopus)

抄録

Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals.

本文言語英語
ページ(範囲)426-430
ページ数5
ジャーナルMaterials Science and Engineering A
400-401
1-2 SUPPL.
DOI
出版ステータス出版済み - 7 25 2005

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル