High-voltage GaN-HEMTs for power electronics applications and current collapse phenomena under high applied voltage

Wataru Saito, Ichiro Omura, Kunio Tsuda

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

8 被引用数 (Scopus)

抄録

Current collapse suppression in 380-V/1.9-A GaN power HEMTs designed for high-voltage power electronics application is reported. The current collapse is caused by the electron trapping by defects in the GaN layer and the interface between the passivation film and the AlGaN layer. Therefore the electric field at the gate edge strongly affects the collapse due to the acceleration of channel electrons. Three types of GaN-HEMTs with different design of the FP structure were fabricated to discuss the relation between the gate-edge electric field and the current collapse. It has been found that the optimized field plate structure minimizes the onresistance increase caused by the current collapse phenomena. In addition, the on-resistance modulation was increased with the leakage current through the GaN layer. It implies that the accelerated electrons are trapped mainly in the GaN-layer defects. Crystal quality improvement of the GaN layer is also necessary to suppress the current collapse phenomena.

本文言語英語
ホスト出版物のタイトル2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
ページ209-212
ページ数4
出版ステータス出版済み - 12月 1 2007
外部発表はい
イベント22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, 米国
継続期間: 5月 14 20075月 17 2007

出版物シリーズ

名前2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

会議

会議22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
国/地域米国
CityAustin, TX
Period5/14/075/17/07

!!!All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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