Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC

Akira Endo, Fumio Komori, Kouhei Morita, Takashi Kajiwara, Tanaka Satoru

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We report highly anisotropic appearance of the quantum Hall effect (QHE) in epitaxial single-layer graphene grown on a vicinal SiC(0001) substrate. Well-developed QHE with zero resistance manifests itself for the current along the steps, whereas the QHE is obscured by pronounced positive magnetoresistance with quadratic magnetic-field dependence for the current across the steps. The latter, as well as the small slope of the Hall resistance, implies the presence of parallel conduction due to remnant carriers in the SiC substrate, albeit with seeming inconsistency with the zero resistance observed for the former current direction. We interpret the anisotropic behavior by assuming that the parallel conduction is sizable along the steps but is virtually prohibited across the steps.

元の言語英語
ページ(範囲)237-250
ページ数14
ジャーナルJournal of Low Temperature Physics
179
発行部数3-4
DOI
出版物ステータス出版済み - 5 1 2015

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Quantum Hall effect
Graphite
Graphene
graphene
quantum Hall effect
conduction
Substrates
Magnetoresistance
Hall resistance
Magnetic fields
slopes
magnetic fields

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

これを引用

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC. / Endo, Akira; Komori, Fumio; Morita, Kouhei; Kajiwara, Takashi; Satoru, Tanaka.

:: Journal of Low Temperature Physics, 巻 179, 番号 3-4, 01.05.2015, p. 237-250.

研究成果: ジャーナルへの寄稿記事

Endo, Akira ; Komori, Fumio ; Morita, Kouhei ; Kajiwara, Takashi ; Satoru, Tanaka. / Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC. :: Journal of Low Temperature Physics. 2015 ; 巻 179, 番号 3-4. pp. 237-250.
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