Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

V. Braccini, S. Kawale, E. Reich, E. Bellingeri, L. Pellegrino, A. Sala, M. Putti, Kohei Higashikawa, Takanobu Kiss, B. Holzapfel, C. Ferdeghini

研究成果: ジャーナルへの寄稿記事

31 引用 (Scopus)

抄録

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2(001) substrate. High critical current density values - larger than 1 MA/cm2 in self field and liquid helium - are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through transmission electron microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what was observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction.

元の言語英語
記事番号172601
ジャーナルApplied Physics Letters
103
発行部数17
DOI
出版物ステータス出版済み - 10 21 2013

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defects
isotropy
thin films
liquid helium
critical current
helium
disorders
current density
transmission electron microscopy
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Braccini, V., Kawale, S., Reich, E., Bellingeri, E., Pellegrino, L., Sala, A., ... Ferdeghini, C. (2013). Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates. Applied Physics Letters, 103(17), [172601]. https://doi.org/10.1063/1.4826677

Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates. / Braccini, V.; Kawale, S.; Reich, E.; Bellingeri, E.; Pellegrino, L.; Sala, A.; Putti, M.; Higashikawa, Kohei; Kiss, Takanobu; Holzapfel, B.; Ferdeghini, C.

:: Applied Physics Letters, 巻 103, 番号 17, 172601, 21.10.2013.

研究成果: ジャーナルへの寄稿記事

Braccini, V, Kawale, S, Reich, E, Bellingeri, E, Pellegrino, L, Sala, A, Putti, M, Higashikawa, K, Kiss, T, Holzapfel, B & Ferdeghini, C 2013, 'Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates', Applied Physics Letters, 巻. 103, 番号 17, 172601. https://doi.org/10.1063/1.4826677
Braccini V, Kawale S, Reich E, Bellingeri E, Pellegrino L, Sala A その他. Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates. Applied Physics Letters. 2013 10 21;103(17). 172601. https://doi.org/10.1063/1.4826677
Braccini, V. ; Kawale, S. ; Reich, E. ; Bellingeri, E. ; Pellegrino, L. ; Sala, A. ; Putti, M. ; Higashikawa, Kohei ; Kiss, Takanobu ; Holzapfel, B. ; Ferdeghini, C. / Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates. :: Applied Physics Letters. 2013 ; 巻 103, 番号 17.
@article{c5ade81a473f48168f2aa2fcdf588750,
title = "Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates",
abstract = "We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2(001) substrate. High critical current density values - larger than 1 MA/cm2 in self field and liquid helium - are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through transmission electron microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what was observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction.",
author = "V. Braccini and S. Kawale and E. Reich and E. Bellingeri and L. Pellegrino and A. Sala and M. Putti and Kohei Higashikawa and Takanobu Kiss and B. Holzapfel and C. Ferdeghini",
year = "2013",
month = "10",
day = "21",
doi = "10.1063/1.4826677",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

AU - Braccini, V.

AU - Kawale, S.

AU - Reich, E.

AU - Bellingeri, E.

AU - Pellegrino, L.

AU - Sala, A.

AU - Putti, M.

AU - Higashikawa, Kohei

AU - Kiss, Takanobu

AU - Holzapfel, B.

AU - Ferdeghini, C.

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2(001) substrate. High critical current density values - larger than 1 MA/cm2 in self field and liquid helium - are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through transmission electron microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what was observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction.

AB - We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2(001) substrate. High critical current density values - larger than 1 MA/cm2 in self field and liquid helium - are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through transmission electron microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what was observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction.

UR - http://www.scopus.com/inward/record.url?scp=84887118719&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887118719&partnerID=8YFLogxK

U2 - 10.1063/1.4826677

DO - 10.1063/1.4826677

M3 - Article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 172601

ER -