Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

K. Kasahara; Keisuke Yamamoto; S. Yamada; T. Murakami; K. Hamaya; K. Mibu; M. Miyao

doi:10.1063/1.3350915

Highly ordered Co₂ FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

K. Kasahara, Keisuke Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, M. Miyao

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

46 被引用数 (Scopus)

抄録

We demonstrate high-quality epitaxial growth of Heusler alloy Co ₂ FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co₂ FeSi samples reported.

本文言語	英語
論文番号	09B105
ジャーナル	Journal of Applied Physics
巻	107
号	9
DOI	https://doi.org/10.1063/1.3350915
出版ステータス	出版済み - 5月 1 2010
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

文献へのアクセス

10.1063/1.3350915

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引用スタイル

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title = "Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy",

abstract = "We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron M{\"o}ssbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.",

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T1 - Highly ordered Co2 FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy

AU - Kasahara, K.

AU - Yamamoto, Keisuke

AU - Yamada, S.

AU - Murakami, T.

AU - Hamaya, K.

AU - Mibu, K.

AU - Miyao, M.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.

AB - We demonstrate high-quality epitaxial growth of Heusler alloy Co 2 FeSi on Ge(111) by molecular beam epitaxy (MBE) at 200 °C. Even for growth at such a low temperature, L 21-ordered crystal structure is formed and highly uniform magnetic environments around the Fe sites are realized, by transmission electron diffraction and conversion electron Mössbauer spectroscopy, respectively. We also find that the magnetic moment reaches 5.37 μB/f.u., which is the highest value in thin-film Co2 FeSi samples reported.

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