Highly Stable 1.3-μm-Wavelength Lasers With p- and n-InP Buried Heterostructure

Tatsuya Takeshita, Tsuyoshi Ito, Mitsuru Sugo, Kazutoshi Kato

研究成果: Contribution to journalArticle査読

抄録

Highly stable 1.3- μ m-wavelength Fabry-Perot lasers with a p- and n-type InP buried heterostructure have been achieved at an ambient temperature of 85 °C. The t0.5deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. It is confirmed that the fabricated 1.3- μ m FP lasers have a different optical-beam-induced-current characteristic from lasers suffering from t0.5 deterioration. The first-stage degradation is due to the deterioration of the active layer and is attributed to the fact that some nonradiative recombination centers are generated in the active layer. VII. summary We have achieved highly stable 1.3-μm-wavelength FP lasers with a p- and n-type InP buried heterostructure, which operate at an ambient temperature of 85 °C. The t0.5 deterioration (second-stage degradation) property does not appear clearly within 6000 h, and the saturated first-stage degradation property remains. We confirmed that the OBIC characteristic of the fabricated 1.3-μm FP lasers is different from that of lasers suffering from to.5 deterioration. The first-stage degradation results from the deterioration of the active layer, and this is attributed to the generation of some nonradiative recombination centers in the active layer. The 1.3-μm FP lasers have sufficient stability at high temperature and constitute promising light sources for local-access optical networks.

本文言語英語
ページ(範囲)576-581
ページ数6
ジャーナルIEEE Transactions on Device and Materials Reliability
8
3
DOI
出版ステータス出版済み - 9 2008
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 安全性、リスク、信頼性、品質管理
  • 電子工学および電気工学

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