Highly stable a-Si:H films deposited by using multi-hollow plasma chemical vapor deposition

Kazunori Koga, Toshihisa Indue, Kouki Bando, Shinya Iwashita, Masaharu Shiratani, Yukio Watanabe

研究成果: Contribution to journalArticle査読

54 被引用数 (Scopus)

抄録

Hydrogenated amorphous silicon (a-Si:H) films of high stability against light exposure have been deposited by using a newly developed multi-hollow plasma chemical vapor deposition (CVD) method. Films deposited in the upstream region in the multi-hollow plasma CVD reactor are a-Si:H films without incorporating a-Si:H nano-particles (clusters), while those in the downstream region are a-Si:H films with incorporating clusters. A-Si:H films without clusters have a low initial defect density of 5 × 10 15 cm -3 and keep the value even after 100 h exposure of intense light intensity of 240 mW/cm 2, whereas a-Si:H films with clusters show a significant increase in defect density from its initial value of 5 × 10 15 cm -3 to 2 × 10 16 cm -3 after 100h light exposure. These results indicate that suppression of clusters incorporated into films is the key to realizing highly stable aSi:H films.

本文言語英語
ページ(範囲)L1430-L1432
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
46-49
DOI
出版ステータス出版済み - 11 25 2005

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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