HiSIM-GaN: Compact Model for GaN-HEMT with Accurate Dynamic Current-Collapse Reproduction

Yasuhiro Okada, Takeshi Mizoguchi, Yuta Tanimoto, Hideyuki Kikuchihara, Toshiyuki Naka, Wataru Saito, Mitiko Miura-Mattausch, Hans Juergen Mattausch

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

The compact model of HIroshima-University Starc Igfet Model (HiSIM)-GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. The model considers all possible charges induced within the device, including the dynamically varying trap density. It is verified that the model can reproduce the 2-D-device simulation results accurately. In particular, the operation frequency dependence of the current collapse can also be captured correctly based on the trap time constant.

本文言語英語
論文番号8472902
ページ(範囲)106-115
ページ数10
ジャーナルIEEE Transactions on Electron Devices
66
1
DOI
出版ステータス出版済み - 1 2019
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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