Hole doping to aligned single-walled carbon nanotubes from sapphire substrate induced by heat treatment

Hiroki Ago, Izumi Tanaka, Masaharu Tsuji, Ken Ichi Ikeda, Seigi Mizuno

    研究成果: Contribution to journalArticle査読

    4 被引用数 (Scopus)

    抄録

    We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire (α-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000°C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

    本文言語英語
    ページ(範囲)18350-18354
    ページ数5
    ジャーナルJournal of Physical Chemistry C
    112
    47
    DOI
    出版ステータス出版済み - 11 27 2008

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • エネルギー(全般)
    • 物理化学および理論化学
    • 表面、皮膜および薄膜

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