Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.

元の言語英語
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ905-907
ページ数3
DOI
出版物ステータス出版済み - 12 1 2010
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国
継続期間: 11 1 201011 4 2010

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
中国
Shanghai
期間11/1/1011/4/10

Fingerprint

Hole mobility
Condensation

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Yang, H., Wang, D., & Nakashima, H. (2010). Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 905-907). [5667472] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667472

Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique. / Yang, Haigui; Wang, Dong; Nakashima, Hiroshi.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 905-907 5667472 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Yang, H, Wang, D & Nakashima, H 2010, Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667472, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 905-907, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 中国, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667472
Yang H, Wang D, Nakashima H. Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique. : ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 905-907. 5667472. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667472
Yang, Haigui ; Wang, Dong ; Nakashima, Hiroshi. / Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 905-907 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
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