Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

Y. Ikoma, K. Uchiyama, F. Watanabe, T. Motooka

    研究成果: Contribution to journalArticle査読

    8 被引用数 (Scopus)

    抄録

    We have investigated the formation and current-voltage characteristics of SiC/Si-dot/SiC resonant tunneling diodes on p+-Si(100) substrates. The surface morphology and current-voltage characteristics were observed by means of atomic force microscopy. The current peaks and negative differential resistance were observed in the current-voltage curves. Numerical calculations showed that the observed current-voltage characteristics were due to the hole resonant tunneling through the SiC double barrier structure.

    本文言語英語
    ページ(範囲)751-754
    ページ数4
    ジャーナルMaterials Science Forum
    389-393
    1
    DOI
    出版ステータス出版済み - 1 1 2002

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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