Homoepitaxial diamond chemical vapor deposition for ultra-light doping

T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011 cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015 cm-3.

本文言語英語
ページ(範囲)197-202
ページ数6
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版ステータス出版済み - 11 1 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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