TY - JOUR
T1 - Homoepitaxial growth of HVPE-GaN doped with Si
AU - Iwinska, M.
AU - Sochacki, T.
AU - Amilusik, M.
AU - Kempisty, P.
AU - Lucznik, B.
AU - Fijalkowski, M.
AU - Litwin-Staszewska, E.
AU - Smalc-Koziorowska, J.
AU - Khapuridze, A.
AU - Staszczak, G.
AU - Grzegory, I.
AU - Bockowski, M.
N1 - Funding Information:
This research was partially supported by The National Center for Research and Development : PBS1/B5/7/2012 and PBS3/B5/32/2015 and by Polish National Science Center through project No. 2012/05/B/ST3/02516 . The authors would like to thank Dr. R. Jakiela from IP PAS for SIMS measurements and TopGaN processing team for their help in preparing the laser diode.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/12/15
Y1 - 2016/12/15
N2 - Results of growth of high structural quality gallium nitride single crystals doped with silicon are described in this paper. Dichlorosilane was used as precursor of silicon in the hydride vapor phase epitaxy method. Crystallization runs with different flows of dichlorosilane were performed and compared. One-inch free-standing HVPE-GaN crystals of high structural quality and high purity, previously grown on ammonothermal GaN substrates, were used as seeds. Structural, electrical, and optical properties of HVPE-GaN doped with silicon are presented and discussed in detail. A laser diode built on the homoepitaxially grown GaN is demonstrated.
AB - Results of growth of high structural quality gallium nitride single crystals doped with silicon are described in this paper. Dichlorosilane was used as precursor of silicon in the hydride vapor phase epitaxy method. Crystallization runs with different flows of dichlorosilane were performed and compared. One-inch free-standing HVPE-GaN crystals of high structural quality and high purity, previously grown on ammonothermal GaN substrates, were used as seeds. Structural, electrical, and optical properties of HVPE-GaN doped with silicon are presented and discussed in detail. A laser diode built on the homoepitaxially grown GaN is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85027939143&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027939143&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2016.08.043
DO - 10.1016/j.jcrysgro.2016.08.043
M3 - Article
AN - SCOPUS:85027939143
VL - 456
SP - 91
EP - 96
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -