Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency

Jae Hyun Lee, Hyun Mi Kim, Ki Bum Kim, Ryota Kabe, Pavel Anzenbacher, Jang Joo Kim

研究成果: Contribution to journalArticle査読

43 被引用数 (Scopus)

抄録

We report that an organic p -dopant tri[1,2-bis(trifluoromethyl)ethane-1,2- dithiolene] [Mo(tfd)3] resulted in higher density of holes than inorganic metal oxide dopants of ReO3 or MoO3 in 1,4-bis[N-(1-naphthyl)- N′ -phenylamino]- 4,4′ -diamine even though the metal oxide dopants possess deeper work functions compared to Mo(tfd) 3. Higher charge generation efficiency results largely from the homogeneous dispersion of Mo(tfd)3 in the host. In contradistinction, the transmission electron microscopy analysis revealed a formation of metal oxide nanoclusters. This highlights the importance of homogeneous dispersion for an efficient doping.

本文言語英語
論文番号173303
ジャーナルApplied Physics Letters
98
17
DOI
出版ステータス出版済み - 4 25 2011
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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