For the integration with modern Si-based electronics, it is important to organize single-walled carbon nanotubes (SWNTs) into a rational structure on a Si wafer with a SiO2 oxide layer. In this study, the aligned growth of SWNTs was achieved on the SiO2/Si substrate whose surface was pretreated with CF4 plasma. The plasma treatment gave the radially extended steps which guided the SWNT growth. Back-gate field effect transistors were demonstrated with the aligned SWNTs. Our work presents the possibility of assembling SWNTs on SiO2/Si substrate through the formation of artificial step structures, which is a great step toward fully functional SWNT-on-Si devices.
|ジャーナル||Journal of Physical Chemistry C|
|出版ステータス||出版済み - 5月 14 2009|
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