H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa; Ryuhei Torigoe; Hidefumi Matsuzaki; Daisuke Yamashita; Giichiro Uchida; Kazunori Koga; Masaharu Shiratani; Yuichi Setsuhara; Keigo Takeda; Makoto Sekine; Masaru Hori

doi:10.7567/JJAP.52.01AB01

H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

電子デバイス工学

研究成果: Contribution to journal › Article › 査読

2 被引用数 (Scopus)

抄録

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H₂/N₂ plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm³. The mass density of carbon films is the key parameter to tune the etching resistance.

本文言語	英語
論文番号	01AB01
ジャーナル	Japanese journal of applied physics
巻	52
号	1 PART2
DOI	https://doi.org/10.7567/JJAP.52.01AB01
出版ステータス	出版済み - 1 1 2013

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.7567/JJAP.52.01AB01

他のファイルとリンク

フィンガープリント「H<sub>2</sub>/N<sub>2</sub> plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. / Urakawa, Tatsuya; Torigoe, Ryuhei; Matsuzaki, Hidefumi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunori ; Shiratani, Masaharu; Setsuhara, Yuichi; Takeda, Keigo; Sekine, Makoto; Hori, Masaru.

In: Japanese journal of applied physics, Vol. 52, No. 1 PART2, 01AB01, 01.01.2013.

研究成果: Contribution to journal › Article › 査読

Urakawa, Tatsuya ; Torigoe, Ryuhei ; Matsuzaki, Hidefumi ; Yamashita, Daisuke ; Uchida, Giichiro ; Koga, Kazunori ; Shiratani, Masaharu ; Setsuhara, Yuichi ; Takeda, Keigo ; Sekine, Makoto ; Hori, Masaru. / H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. In: Japanese journal of applied physics. 2013 ; Vol. 52, No. 1 PART2.

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AU - Sekine, Makoto

AU - Hori, Masaru

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