H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa; Ryuhei Torigoe; Hidefumi Matsuzaki; Daisuke Yamashita; Giichiro Uchida; Kazunori Koga; Masaharu Shiratani; Yuichi Setsuhara; Keigo Takeda; Makoto Sekine; Masaru Hori

doi:10.7567/JJAP.52.01AB01

H₂/N₂ plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

2 被引用数 (Scopus)

抄録

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H₂/N₂ plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm³. The mass density of carbon films is the key parameter to tune the etching resistance.

本文言語	英語
論文番号	01AB01
ジャーナル	Japanese journal of applied physics
巻	52
号	1 PART2
DOI	https://doi.org/10.7567/JJAP.52.01AB01
出版ステータス	出版済み - 1月 1 2013

!!!All Science Journal Classification (ASJC) codes

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.7567/JJAP.52.01AB01

他のファイルとリンク

引用スタイル

@article{cd30c6f42bfb4c899c0dbd7ebc4f906e,

title = "H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition",

abstract = "Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.",

author = "Tatsuya Urakawa and Ryuhei Torigoe and Hidefumi Matsuzaki and Daisuke Yamashita and Giichiro Uchida and Kazunori Koga and Masaharu Shiratani and Yuichi Setsuhara and Keigo Takeda and Makoto Sekine and Masaru Hori",

year = "2013",

month = jan,

day = "1",

doi = "10.7567/JJAP.52.01AB01",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "1 PART2",

}

TY - JOUR

T1 - H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

AU - Urakawa, Tatsuya

AU - Torigoe, Ryuhei

AU - Matsuzaki, Hidefumi

AU - Yamashita, Daisuke

AU - Uchida, Giichiro

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Setsuhara, Yuichi

AU - Takeda, Keigo

AU - Sekine, Makoto

AU - Hori, Masaru

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

AB - Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

UR - http://www.scopus.com/inward/record.url?scp=84872848214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872848214&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.01AB01

DO - 10.7567/JJAP.52.01AB01

M3 - Article

AN - SCOPUS:84872848214

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1 PART2

M1 - 01AB01

ER -