H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

研究成果: ジャーナルへの寄稿 › 記事

2 引用 (Scopus)

抄録

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

元の言語英語
記事番号01AB01
ジャーナルJapanese journal of applied physics
巻52
発行部数1 PART2
DOI
出版物ステータス出版済み - 1 1 2013

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Plasma etching
Carbon films
plasma etching
Chemical vapor deposition
vapor deposition
Plasmas
carbon
Etching
etching
Protective coatings
dummies
protective coatings
Nanostructures

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. / Urakawa, Tatsuya; Torigoe, Ryuhei; Matsuzaki, Hidefumi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunori; Shiratani, Masaharu; Setsuhara, Yuichi; Takeda, Keigo; Sekine, Makoto; Hori, Masaru.

：: Japanese journal of applied physics, 巻 52, 番号 1 PART2, 01AB01, 01.01.2013.

研究成果: ジャーナルへの寄稿 › 記事

Urakawa, T, Torigoe, R, Matsuzaki, H, Yamashita, D, Uchida, G, Koga, K, Shiratani, M, Setsuhara, Y, Takeda, K, Sekine, M & Hori, M 2013, 'H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition', Japanese journal of applied physics, 巻. 52, 番号 1 PART2, 01AB01. https://doi.org/10.7567/JJAP.52.01AB01
Urakawa T, Torigoe R, Matsuzaki H, Yamashita D, Uchida G, Koga K その他. H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. Japanese journal of applied physics. 2013 1 1;52(1 PART2). 01AB01. https://doi.org/10.7567/JJAP.52.01AB01
Urakawa, Tatsuya ; Torigoe, Ryuhei ; Matsuzaki, Hidefumi ; Yamashita, Daisuke ; Uchida, Giichiro ; Koga, Kazunori ; Shiratani, Masaharu ; Setsuhara, Yuichi ; Takeda, Keigo ; Sekine, Makoto ; Hori, Masaru. / H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition. ：: Japanese journal of applied physics. 2013 ; 巻 52, 番号 1 PART2.
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AU - Urakawa, Tatsuya

AU - Torigoe, Ryuhei

AU - Matsuzaki, Hidefumi

AU - Yamashita, Daisuke

AU - Uchida, Giichiro

AU - Koga, Kazunori

AU - Shiratani, Masaharu

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AU - Takeda, Keigo

AU - Sekine, Makoto

AU - Hori, Masaru

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