H2/N2 plasma etching rate of carbon films deposited by H-assisted plasma chemical vapor deposition

Tatsuya Urakawa, Ryuhei Torigoe, Hidefumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Keigo Takeda, Makoto Sekine, Masaru Hori

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Etching resistance of carbon films deposited by plasma chemical vapor deposition (CVD) is one of the concerns to fabricate nanostructures using such carbon films as protective coating films and dummy films. We have carried out H2/N2 plasma etching of carbon films deposited by using an H-assisted plasma CVD method. The etching rate of carbon films decreases exponentially with increasing the mass density of carbon films from 1.51 to 2.27 g/cm3. The mass density of carbon films is the key parameter to tune the etching resistance.

本文言語英語
論文番号01AB01
ジャーナルJapanese journal of applied physics
52
1 PART2
DOI
出版ステータス出版済み - 1 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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