H+ implantation-enhanced stress relaxation in c-Si 1-xGex on SiO2 during oxidation-induced Ge condensation process

T. Sadoh, R. Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

Enhancement effects of H+ implantation on stress relaxation of c-Si1-xGex layers on SiO2 during oxidation-induced Ge condensation process have been investigated. Stress relaxation of c-Si1-xGex layers during oxidation (1100 °C) was significantly improved by high-dose (>1015 cm -2) H+ implantation. However, oxidation was also enhanced by implantation. Enhanced oxidation was completely suppressed by the two-step annealing (1st: 500 °C for 30 min, 2nd: 850 °C for 60 min) before oxidation. The enhanced stress relaxation was tentatively assigned to enhanced gliding of c-Si1-xGex layers on SiO2. This newly developed combination method of H+ implantation, two-step annealing, and oxidation-induced Ge condensation will be a powerful tool to fabricate highly relaxed c-Si1-xGex buffer layers for growing strained Si layers.

本文言語英語
ページ(範囲)167-170
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
8
1-3 SPEC. ISS.
DOI
出版ステータス出版済み - 2月 2005

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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