HVEM characterization of crack tip dislocations in silicon crystals

Masaki Tanaka, Kenji Higashida

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抄録

Crack tip dislocations in silicon crystals have been studied using high voltage electron microscopy (HVEM). The dislocation images have been investigated by comparing the observed images to those that were simulated. Dislocation images were computed in the conditions g·b = 0, 1 or 2 (g: diffraction vector, b: Burgers vector). The characteristics of 60° dislocations were examined in detail since these dislocations are not characterized only by the condition g·b = 0 criterion. The computed images were in good agreement with those observed by HVEM. Residual contrasts of 60° dislocations under the condition g·b = 0 exhibited characteristic black-and-white contrasts, which can contribute to the characterization of the dislocations. Such characterization of dislocations is essential in order to clarify the dislocation mechanism which controls the fracture toughness of materials.

元の言語英語
ページ(範囲)353-360
ページ数8
ジャーナルJournal of Electron Microscopy
53
発行部数4
DOI
出版物ステータス出版済み - 12 17 2004

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crack tips
Silicon
Dislocations (crystals)
Crack tips
Electron microscopy
high voltages
electron microscopy
Electron Microscopy
Burgers vector
Crystals
Electric potential
silicon
crystals
Fracture toughness
Diffraction
fracture strength
hydroquinone

All Science Journal Classification (ASJC) codes

  • Instrumentation

これを引用

HVEM characterization of crack tip dislocations in silicon crystals. / Tanaka, Masaki; Higashida, Kenji.

:: Journal of Electron Microscopy, 巻 53, 番号 4, 17.12.2004, p. 353-360.

研究成果: ジャーナルへの寄稿記事

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