HVEM study of crack-tip dislocations in Si crystals prepared by FIB and twin-blade cutting method

Masaki Tanaka, Kenji Higashida, Toru Fukui, Tatsuo Yokote

研究成果: Contribution to journalArticle

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Crack-tip dislocations in silicon crystals have been examined by using high-voltage electron microscopy. Cracks were introduced by the Vickers indentation method at room temperature and the indented specimens were annealed at high temperatures to induce dislocations around crack tips under the presence of residual stress due to the indentation. A selected area around a crack tip was thinned by a focused ion beam (FIB) technique. Specimens were thinned in advance by a twin-blade cutting (TBC) method, which is a simple cutting process for saving FIB machine time. A combination of FIB and TBC can be a useful thinning procedure for the efficient preparation of transmission electron microscopy specimens. Characteristic dislocation structures were observed around the tip of a crack, aiding the elucidation of dislocation processes, which is essential to increase the fracture toughness of materials.

元の言語英語
ページ(範囲)505-509
ページ数5
ジャーナルJournal of Electron Microscopy
53
発行部数5
DOI
出版物ステータス出版済み - 12 1 2004

All Science Journal Classification (ASJC) codes

  • Instrumentation

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