A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (Al) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 °C and is AlCl3 when the temperature is below 790 °C. Since AlCl 3 is less reactive with quartz (SiO2) than AlCl, HVPE of AlN is possible using AlCl3 and NH3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported.
|ジャーナル||Physica Status Solidi C: Conferences|
|出版ステータス||出版済み - 2003|
|イベント||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本|
継続期間: 5 25 2003 → 5 30 2003
All Science Journal Classification (ASJC) codes