Hydride vapor phase epitaxy of AlN: Thermodynamic analysis of aluminum source and its application to growth

Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Y. Kangawa, A. Koukitu

研究成果: Contribution to journalConference article査読

71 被引用数 (Scopus)

抄録

A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (Al) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 °C and is AlCl3 when the temperature is below 790 °C. Since AlCl 3 is less reactive with quartz (SiO2) than AlCl, HVPE of AlN is possible using AlCl3 and NH3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported.

本文言語英語
ページ(範囲)2498-2501
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
7
DOI
出版ステータス出版済み - 2003
外部発表はい
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本
継続期間: 5 25 20035 30 2003

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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