Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Sean W. King, Tanaka Satoru, Robert F. Davis, Robert J. Nemanich

研究成果: ジャーナルへの寄稿記事

6 引用 (Scopus)

抄録

Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H2) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H2 desorption at both lower temperatures (200-550 °C) as well as higher temperatures (>700 °C). The low temperature H2 desorption was deconvoluted into multiple desorption states that, based on similarities to H2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H2 desorption was similarly attributed to H2 evolved from surface O-H groups at ∼750 °C as well as the liberation of H2 during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H2 desorption from previously undetected silicon hydride and surface hydroxide species.

元の言語英語
記事番号05E105
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
33
発行部数5
DOI
出版物ステータス出版済み - 9 1 2015

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Hydrofluoric Acid
hydrofluoric acid
hydrogen plasma
Silicon carbide
silicon carbides
Hydrogen
Desorption
desorption
Plasmas
hydrogen
Thermal desorption
Silicon
Temperature programmed desorption
Photoelectron spectroscopy
Epitaxial growth
Temperature
silicon carbide
x ray spectroscopy
Semiconductor materials
X rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

これを引用

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces. / King, Sean W.; Satoru, Tanaka; Davis, Robert F.; Nemanich, Robert J.

:: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 巻 33, 番号 5, 05E105, 01.09.2015.

研究成果: ジャーナルへの寄稿記事

@article{95ef0876d4d841beb0980553040b6e8d,
title = "Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces",
abstract = "Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H2) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H2 desorption at both lower temperatures (200-550 °C) as well as higher temperatures (>700 °C). The low temperature H2 desorption was deconvoluted into multiple desorption states that, based on similarities to H2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H2 desorption was similarly attributed to H2 evolved from surface O-H groups at ∼750 °C as well as the liberation of H2 during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H2 desorption from previously undetected silicon hydride and surface hydroxide species.",
author = "King, {Sean W.} and Tanaka Satoru and Davis, {Robert F.} and Nemanich, {Robert J.}",
year = "2015",
month = "9",
day = "1",
doi = "10.1116/1.4921526",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

AU - King, Sean W.

AU - Satoru, Tanaka

AU - Davis, Robert F.

AU - Nemanich, Robert J.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H2) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H2 desorption at both lower temperatures (200-550 °C) as well as higher temperatures (>700 °C). The low temperature H2 desorption was deconvoluted into multiple desorption states that, based on similarities to H2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H2 desorption was similarly attributed to H2 evolved from surface O-H groups at ∼750 °C as well as the liberation of H2 during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H2 desorption from previously undetected silicon hydride and surface hydroxide species.

AB - Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H2) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H2 desorption at both lower temperatures (200-550 °C) as well as higher temperatures (>700 °C). The low temperature H2 desorption was deconvoluted into multiple desorption states that, based on similarities to H2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H2 desorption was similarly attributed to H2 evolved from surface O-H groups at ∼750 °C as well as the liberation of H2 during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H2 desorption from previously undetected silicon hydride and surface hydroxide species.

UR - http://www.scopus.com/inward/record.url?scp=84930005400&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930005400&partnerID=8YFLogxK

U2 - 10.1116/1.4921526

DO - 10.1116/1.4921526

M3 - Article

AN - SCOPUS:84930005400

VL - 33

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 5

M1 - 05E105

ER -