Hydrogen impurities in SnO2 films and bulk ceramics were investigated in terms of mass transport and electron transport. The hydrogen concentration (n[H]) in these samples was found to be 1019 cm-3 or higher. Further increase in n[H] could be achieved by annealing the samples in a humid atmosphere. The isotope tracer (1H/2H exchange) study revealed that a part of the hydrogen in these samples showed rapid migration even at 300 °C. However, electrical measurements revealed that the electron concentration in the samples was much less than n[H]. These results could be explained by assuming the presence of defect-hydrogen complexes.
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