Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 1998|
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