Identification of surface atoms of LiGaO2(001) substrate for hexagonal GaN film by coaxial impact collision ion scattering spectroscopy

Takao Ishii, Masashi Mukaida, Takaharu Nishihara, Shigeki Hayashi, Makoto Shinohara

研究成果: ジャーナルへの寄稿学術誌査読

5 被引用数 (Scopus)

抄録

Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS). We found that the terminating atoms of the easily etched surface of the substrate are oxygen and that those of the hardly etched surface are metal (Li and Ga). The relation is explained by the surface bonding model of the wurtzite-type AII-BIV compound. GaN thin films grew epitaxially only on the metal surface of the substrate.

本文言語英語
ページ(範囲)L672-L674
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
6 A
DOI
出版ステータス出版済み - 1998
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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