In a study, VO2 heterostructures were epitaxially grown on the TiO 2. Both VO2 and TiO2 had the tetragonal structure with the small lattice mismatch plane and the VO2 thin film with an atomically flat surface could grow up to around 15 nm thickness without lattice relaxation on the TiO2 substrate. The metal–insulator transition in VO 2 occurred between the insulating phase at low temperature and the metallic phase at high temperature.
|出版ステータス||出版済み - 3月 28 2017|
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)