Imagings of picosecond-photoexcited carriers and enhanced auger recombination rate by transient reflecting grating measurements

Takayuki Tanaka, Akira Harata, Tsuguo Sawada

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

Photoinduced dynamic processes at a silicon surface were investigated by time-resolved measurements of a transient reflecting grating with 532 nm excitation and detection. The signal caused by photoexcited carriers was separated from signals due to thermal and acoustic effects. The carrier signal was found to be more sensitive to ion induced damages than the thermal and acoustic effect signal. Use of the carrier signal provided an in-plane distribution image of near surface damage induced by helium ion implantation (energy, 200 keV; dose. 1015 atoms/cm2). The cause of the contrast formation was found to be the change of Auger recombination rate γ3. The obtained γ3 for intrinsic silicon was 4.0 × 10-29 cm6/s which was two orders of magnitude larger than the bulk value. The results indicated defects near the surface region (∼ 100 nm) accelerated γ3.

本文言語英語
ページ(範囲)3642-3647
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
6 SUPPL. A
DOI
出版ステータス出版済み - 6 1996
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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