Impact of Hydrided and Non-Hydrided Materials Near Transistors on Neutron-Induced Single Event Upsets

Shin Ichiro Abe, Tatsuhiko Sato, Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Wang Liao, Kojiro Ito, Masanori Hashimoto, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

The impacts of hydrided and non-hydrided materials near transistors on neutron-induced single event upsets (SEUs) were investigated by simulating monoenergetic neutron irradiations on 65-nm technology bulk static random access memories. The onset energy of the SEUs induced by H ions depends on the shielding capability, i.e., the material and thickness, of components placed in front of transistors when those components do not contain hydrogen atoms. The shielding capability also influences the initial slope observed in the energy-dependence of SEU cross sections. Taking into account the non-hydrided component attached to memory cells used in the simulation, all experimental data measured at each neutron facility were reproduced well using SEU cross sections obtained by simulation. We also find that the effect of components near transistors on neutron-induced soft error rates is not negligible even for irradiation by white neutrons.

本文言語英語
ホスト出版物のタイトル2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728131993
DOI
出版ステータス出版済み - 4 2020
イベント2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, 米国
継続期間: 4 28 20205 30 2020

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2020-April
ISSN(印刷版)1541-7026

会議

会議2020 IEEE International Reliability Physics Symposium, IRPS 2020
国/地域米国
CityVirtual, Online
Period4/28/205/30/20

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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