Impact of Laser-Induced Graphitization on Diamond Schottky Barrier Diodes

Tomoki Iwao, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Hitoshi Umezawa, Shinya Ohmagari

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Pseudovertical Schottky barrier diodes (SBDs) are fabricated on a single-crystal diamond substrate. Herein, the structural and electrical influence of laser-induced graphitization which takes place during the laser-dicing process is investigated. Before laser irradiation, the fabricated SBDs show a high rectifying ratio of more than 11 orders at ±10 V and undetectable leakage current. Ideality factor (n) and Schottky barrier height (ϕ b) are estimated to be 1.09 and 1.35 eV, respectively. After laser irradiation, the SBDs still exhibit good diode behavior, in which n and ϕ b values slightly change by 10%. Leakage current is increased about two orders of magnitude and breakdown voltage is degraded from 940 to 375 V due to the presence of graphite debris. After removing the graphite debris utilizing the oxygen plasma cleaning process through an inductively coupled plasma (ICP) system, all SBDs are recovered back to typical diode characteristics. It is found that strain and surface defects that may be introduced during laser dicing and post-ICP etching do not severely influence SBD characteristics.

本文言語英語
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
DOI
出版ステータス印刷中 - 2022

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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