抄録
Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 50-54 |
| ページ数 | 5 |
| ジャーナル | Thin Solid Films |
| 巻 | 576 |
| DOI | |
| 出版物ステータス | 出版済み - 2 2 2015 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
これを引用
Impact of low-energy ions on plasma deposition of cubic boron nitride. / Tsutsui, Kungen; Matsumoto, Seiichiro.
：: Thin Solid Films, 巻 576, 02.02.2015, p. 50-54.研究成果: ジャーナルへの寄稿 › 記事
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TY - JOUR
T1 - Impact of low-energy ions on plasma deposition of cubic boron nitride
AU - Tsutsui, Kungen
AU - Matsumoto, Seiichiro
PY - 2015/2/2
Y1 - 2015/2/2
N2 - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.
AB - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.
UR - http://www.scopus.com/inward/record.url?scp=84922377452&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84922377452&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2014.12.020
DO - 10.1016/j.tsf.2014.12.020
M3 - Article
AN - SCOPUS:84922377452
VL - 576
SP - 50
EP - 54
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -