Impact of low-energy ions on plasma deposition of cubic boron nitride

Kungen Teii, Seiichiro Matsumoto

研究成果: ジャーナルへの寄稿学術誌査読

13 被引用数 (Scopus)

抄録

Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.

本文言語英語
ページ(範囲)50-54
ページ数5
ジャーナルThin Solid Films
576
DOI
出版ステータス出版済み - 2月 2 2015

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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