TY - JOUR
T1 - Impact of low-energy ions on plasma deposition of cubic boron nitride
AU - Teii, Kungen
AU - Matsumoto, Seiichiro
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research (B) (KAKENHI No. 26289241 ) from the Japan Society for the Promotion of Science , a Funding Program for Next Generation World-Leading Researchers (NEXT Program No. GR080) from Cabinet Office, Government of Japan , and an Industrial Technology Research Grant Program (No. 08A20020c) from New Energy and Industrial Technology Development Organization (NEDO) of Japan.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2015/2/2
Y1 - 2015/2/2
N2 - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.
AB - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.
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U2 - 10.1016/j.tsf.2014.12.020
DO - 10.1016/j.tsf.2014.12.020
M3 - Article
AN - SCOPUS:84922377452
VL - 576
SP - 50
EP - 54
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -