Impact of low-energy ions on plasma deposition of cubic boron nitride

Kungen Tsutsui, Seiichiro Matsumoto

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

抄録

Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.

元の言語英語
ページ(範囲)50-54
ページ数5
ジャーナルThin Solid Films
576
DOI
出版物ステータス出版済み - 2 2 2015

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Cubic boron nitride
Plasma deposition
boron nitrides
Ions
Boron
Fluxes
boron
ions
energy
Substrates
ion impact
Fluorine
positive ions
sheaths
negative ions
fluorine
deposits
Negative ions
Deposits

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Impact of low-energy ions on plasma deposition of cubic boron nitride. / Tsutsui, Kungen; Matsumoto, Seiichiro.

:: Thin Solid Films, 巻 576, 02.02.2015, p. 50-54.

研究成果: ジャーナルへの寄稿記事

@article{0bed02be45c04b179de0b17214c701a9,
title = "Impact of low-energy ions on plasma deposition of cubic boron nitride",
abstract = "Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.",
author = "Kungen Tsutsui and Seiichiro Matsumoto",
year = "2015",
month = "2",
day = "2",
doi = "10.1016/j.tsf.2014.12.020",
language = "English",
volume = "576",
pages = "50--54",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Impact of low-energy ions on plasma deposition of cubic boron nitride

AU - Tsutsui, Kungen

AU - Matsumoto, Seiichiro

PY - 2015/2/2

Y1 - 2015/2/2

N2 - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.

AB - Plasma deposition of cubic boron nitride (cBN) films under low-energy (a few eV to ∼40 eV) ion impact with the chemistry of fluorine is studied in terms of ion energy, ion flux, and ion to boron flux ratio onto the substrate. The ion energy and the ion to boron flux ratio are determined from the sheath potential and the ratio of incident ion flux to net deposited boron flux, respectively. For negative substrate biases where a mixture of turbostratic and amorphous BN phases only or no deposit is formed, both the ion energy and the ion to boron flux ratio are high. For positive substrate biases where cBN phase is formed, the ion energy and the ion to boron flux ratio are in the range of a few eV to 35 eV and 100 to 130, respectively. The results indicate that the impact of positive ions with high ion to boron flux ratios makes a substantial contribution to the formation of cBN phase, while that of negative ions and electrons makes only a minor contribution.

UR - http://www.scopus.com/inward/record.url?scp=84922377452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922377452&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.12.020

DO - 10.1016/j.tsf.2014.12.020

M3 - Article

AN - SCOPUS:84922377452

VL - 576

SP - 50

EP - 54

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -