Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Physics

• Aluminium 100%
• Excimer Laser 54%
• Laser Annealing 54%
• Dislocation 36%
• Ratios 27%
• Increasing 18%
• Impurities 18%
• Impact 18%
• Electrical Resistivity 18%
• Laser 9%
• Existence 9%
• Emission 9%
• Atoms 9%
• Electrodes 9%
• Retarding 9%
• Crystallinity 9%
• Photoluminescence 9%
• Room Temperature 9%
• Semiconductor Laser 9%
• Light Emitting Diode 9%
• Electron Source 9%

Material Science

• Gallium Nitride 100%
• Density 18%
• Impurity 18%
• Material 9%
• Hole Mobility 9%
• Conductivity 9%
• Hole Concentration 9%