Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Motonobu Tampo, Soshi Takeshita, Yasuhiro Miyake

研究成果: Contribution to journalArticle

抜粋

Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk and fully depleted silicon on insulator static random access memories at two angles of incidence: 0° (vertical) and 45° (tilted). The tilted incidence drifts the muon energy peak to a higher energy as expected. However, the SEU characteristics in the bulk device between the vertical and tilted incidences, including the voltage dependences of the SEU cross sections and multiple cells upset patterns, are similar despite the unexpected impact on the SEU cross section at an operating voltage of 0.4 V.

元の言語英語
記事番号9007746
ページ(範囲)1566-1572
ページ数7
ジャーナルIEEE Transactions on Nuclear Science
67
発行部数7
DOI
出版物ステータス出版済み - 7 2020

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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