Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin Ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi OhashiHiroshi Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

TCAD simulation has been recognized as a powerful design tool for insulated gate bipolar transistors (IGBTs). In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm2 region for IGBTs with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction.

本文言語英語
ホスト出版物のタイトル2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ311-314
ページ数4
ISBN(電子版)9781728105796
DOI
出版ステータス出版済み - 5 2019
イベント31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 - Shanghai, 中国
継続期間: 5 19 20195 23 2019

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2019-May
ISSN(印刷版)1063-6854

会議

会議31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019
Country中国
CityShanghai
Period5/19/195/23/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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