Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays

Yi He, Reiji Hattori, Jerzy Kanicki

研究成果: ジャーナルへの寄稿学術誌査読

101 被引用数 (Scopus)

抄録

Two improved four thin-film-transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed. Both circuits can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The circuit simulation results indicate that an excellent linearity between the output current and input current can be established. An output current level higher than ∼ 5 μA can be achieved with these circuits. This current level can provide a pixel electrode brightness higher than 1,000 cd/m 2 with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel electrode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

本文言語英語
ページ(範囲)1322-1325
ページ数4
ジャーナルIEEE Transactions on Electron Devices
48
7
DOI
出版ステータス出版済み - 7月 2001

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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