Improved Carrier Mobility of Poly-Ge Ultrathin Films on Insulator by Solid-Phase Crystallization Combined with a-Si Capping Layers

Ryutaro Hara, Masanori Chiyozono, Taizoh Sadoh

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

To improve the carrier mobility of poly-Ge ultrathin films (thickness: ~20 nm) on insulating substrates, a novel solid-phase crystallization (SPC) technique is developed. Carrier mobility of poly-Ge films obtained by conventional SPC of a-Ge films on insulator significantly decreases with decreasing thickness and cannot be measured for ultrathin films (thickness: ~20 nm). This phenomenon is attribute to retardation of SPC due to introduction of air into the surface regions of a-Ge films. To solve this problem, capping of the a-Ge films is examined. Interestingly, by introducing a-Si capping layers, carrier mobility is increased. As a result, high carrier mobility of ~80 cm2/Vs is obtained even for ultrathin films (thickness: ~20 nm). This technique will be useful to realize advanced thin-film devices for next-generation electronics.

本文言語英語
ホスト出版物のタイトルProceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials
出版社Institute of Electrical and Electronics Engineers Inc.
ページ106-107
ページ数2
ISBN(電子版)9784991216909
出版ステータス出版済み - 2021
イベント28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2021 - Virtual, Online, 日本
継続期間: 6月 29 20217月 2 2021

出版物シリーズ

名前Proceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

会議

会議28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2021
国/地域日本
CityVirtual, Online
Period6/29/217/2/21

!!!All Science Journal Classification (ASJC) codes

  • コンピュータ グラフィックスおよびコンピュータ支援設計
  • メディア記述
  • 電子材料、光学材料、および磁性材料
  • 器械工学

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