Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm) by Interface-Modulated Solid-Phase Crystallization Combined with Thinning

Masanori Chiyozono, Xiangsheng Gong, Taizoh Sadoh

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

A technique to obtain high carrier mobility of Sn-doped Ge thin-films (thickness ≤50 nm) on insulator is proposed. The carrier mobilities of Ge films grown by interface-modulated solid-phase crystallization decrease with decreasing deposition thickness. From crystal structure analysis, it is revealed that decrease in the grain sizes with decreasing deposition thickness causes the decrease of the mobilities. To solve this problem, we propose thinning of grown films (deposition thickness: 50 nm) by etching. This achieves high carrier mobility (170 cm2/Vs) even for thin-films (thickness: 20 nm). This technique will be useful to realize advanced fully-depleted devices for next-generation electronics.

本文言語英語
ホスト出版物のタイトルProceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials
出版社Institute of Electrical and Electronics Engineers Inc.
ページ75-76
ページ数2
ISBN(電子版)9784990875398
DOI
出版ステータス出版済み - 9月 2020
イベント27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020 - Virtual, Kyoto, 日本
継続期間: 9月 1 20209月 4 2020

出版物シリーズ

名前Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

会議

会議27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2020
国/地域日本
CityVirtual, Kyoto
Period9/1/209/4/20

!!!All Science Journal Classification (ASJC) codes

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • メディア記述
  • 電子材料、光学材料、および磁性材料

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