Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong, Chang Xu, Taizoh Sadoh

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

本文言語英語
ホスト出版物のタイトルAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials, Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9784990875374
DOI
出版ステータス出版済み - 7 2019
イベント26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, 日本
継続期間: 7 2 20197 5 2019

出版物シリーズ

名前AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

会議

会議26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
Country日本
CityKyoto
Period7/2/197/5/19

All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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