Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong, Chang Xu, Taizoh Sadoh

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

元の言語英語
ホスト出版物のタイトルAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
ホスト出版物のサブタイトルTFT Technologies and FPD Materials, Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9784990875374
DOI
出版物ステータス出版済み - 7 2019
イベント26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, 日本
継続期間: 7 2 20197 5 2019

出版物シリーズ

名前AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

会議

会議26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
日本
Kyoto
期間7/2/197/5/19

Fingerprint

Carrier mobility
Crystallization
carrier mobility
solid phases
Modulation
insulators
crystallization
modulation
thin films
Energy barriers
Transistors
Grain boundaries
transistors
grain boundaries
Thin films
Substrates
Temperature
energy

All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

これを引用

Gong, X., Xu, C., & Sadoh, T. (2019). Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. : AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings [8830601] (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830601

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. / Gong, Xiangsheng; Xu, Chang; Sadoh, Taizoh.

AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830601 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

研究成果: 著書/レポートタイプへの貢献会議での発言

Gong, X, Xu, C & Sadoh, T 2019, Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. : AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830601, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, 日本, 7/2/19. https://doi.org/10.23919/AM-FPD.2019.8830601
Gong X, Xu C, Sadoh T. Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. : AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830601. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). https://doi.org/10.23919/AM-FPD.2019.8830601
Gong, Xiangsheng ; Xu, Chang ; Sadoh, Taizoh. / Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
@inproceedings{15c85bd5919c4fac841d350a90a3b7f7,
title = "Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation",
abstract = "High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).",
author = "Xiangsheng Gong and Chang Xu and Taizoh Sadoh",
year = "2019",
month = "7",
doi = "10.23919/AM-FPD.2019.8830601",
language = "English",
series = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",

}

TY - GEN

T1 - Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

AU - Gong, Xiangsheng

AU - Xu, Chang

AU - Sadoh, Taizoh

PY - 2019/7

Y1 - 2019/7

N2 - High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

AB - High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

UR - http://www.scopus.com/inward/record.url?scp=85073229200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073229200&partnerID=8YFLogxK

U2 - 10.23919/AM-FPD.2019.8830601

DO - 10.23919/AM-FPD.2019.8830601

M3 - Conference contribution

AN - SCOPUS:85073229200

T3 - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

ER -