Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials)

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

研究成果: Contribution to journalArticle査読

本文言語英語
ページ(範囲)3147-3149
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
45
4
出版ステータス出版済み - 4 2006

引用スタイル