Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.

本文言語英語
論文番号9245572
ページ(範囲)1814-1816
ページ数3
ジャーナルIEEE Electron Device Letters
41
12
DOI
出版ステータス出版済み - 12 2020

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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