Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films

R. Kojima, Hiroshi Ikenoue, M. Suwa, Akihiro Ikeda, Daisuke Nakamura, Tanemasa Asano, T. Okada

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抄録

We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiN x film. The SiN x film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm 2 -4.0 J/cm 2 , and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (∼1×10 21 /cm 3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiN x film. In the case of laser irradiation at the fluence of 2.0 J/cm 2 , the SiN x film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm 2 , ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.

元の言語英語
ホスト出版物のタイトルLaser 3D Manufacturing III
編集者Alberto Pique, Bo Gu, Henry Helvajian
出版者SPIE
ISBN(電子版)9781628419733
DOI
出版物ステータス出版済み - 1 1 2016
イベントLaser 3D Manufacturing III - San Francisco, 米国
継続期間: 2 15 20162 18 2016

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9738
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser 3D Manufacturing III
米国
San Francisco
期間2/15/162/18/16

Fingerprint

Contact Resistance
Silicon Nitride
Excimer Laser
Excimer lasers
Contact resistance
contact resistance
Silicon nitride
silicon nitrides
Irradiation
excimer lasers
Ohmic contacts
Laser beam effects
shot
Doping (additives)
irradiation
Laser ablation
Substrates
Substrate
Nitrogen
electric contacts

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Kojima, R., Ikenoue, H., Suwa, M., Ikeda, A., Nakamura, D., Asano, T., & Okada, T. (2016). Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films. : A. Pique, B. Gu, & H. Helvajian (版), Laser 3D Manufacturing III [973803] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 9738). SPIE. https://doi.org/10.1117/12.2212021

Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films. / Kojima, R.; Ikenoue, Hiroshi; Suwa, M.; Ikeda, Akihiro; Nakamura, Daisuke; Asano, Tanemasa; Okada, T.

Laser 3D Manufacturing III. 版 / Alberto Pique; Bo Gu; Henry Helvajian. SPIE, 2016. 973803 (Proceedings of SPIE - The International Society for Optical Engineering; 巻 9738).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kojima, R, Ikenoue, H, Suwa, M, Ikeda, A, Nakamura, D, Asano, T & Okada, T 2016, Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films. : A Pique, B Gu & H Helvajian (版), Laser 3D Manufacturing III., 973803, Proceedings of SPIE - The International Society for Optical Engineering, 巻. 9738, SPIE, Laser 3D Manufacturing III, San Francisco, 米国, 2/15/16. https://doi.org/10.1117/12.2212021
Kojima R, Ikenoue H, Suwa M, Ikeda A, Nakamura D, Asano T その他. Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films. : Pique A, Gu B, Helvajian H, 編集者, Laser 3D Manufacturing III. SPIE. 2016. 973803. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2212021
Kojima, R. ; Ikenoue, Hiroshi ; Suwa, M. ; Ikeda, Akihiro ; Nakamura, Daisuke ; Asano, Tanemasa ; Okada, T. / Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films. Laser 3D Manufacturing III. 編集者 / Alberto Pique ; Bo Gu ; Henry Helvajian. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{fc3ffe9ef6e44b5cbbd96be9f22ae3bb,
title = "Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films",
abstract = "We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiN x film. The SiN x film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm 2 -4.0 J/cm 2 , and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (∼1×10 21 /cm 3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiN x film. In the case of laser irradiation at the fluence of 2.0 J/cm 2 , the SiN x film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm 2 , ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.",
author = "R. Kojima and Hiroshi Ikenoue and M. Suwa and Akihiro Ikeda and Daisuke Nakamura and Tanemasa Asano and T. Okada",
year = "2016",
month = "1",
day = "1",
doi = "10.1117/12.2212021",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Alberto Pique and Bo Gu and Henry Helvajian",
booktitle = "Laser 3D Manufacturing III",
address = "United States",

}

TY - GEN

T1 - Improvement in contact resistance of 4H-SiC by excimer laser doping using silicon nitride films

AU - Kojima, R.

AU - Ikenoue, Hiroshi

AU - Suwa, M.

AU - Ikeda, Akihiro

AU - Nakamura, Daisuke

AU - Asano, Tanemasa

AU - Okada, T.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiN x film. The SiN x film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm 2 -4.0 J/cm 2 , and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (∼1×10 21 /cm 3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiN x film. In the case of laser irradiation at the fluence of 2.0 J/cm 2 , the SiN x film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm 2 , ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.

AB - We have proposed a novel method of low-temperature nitrogen doping into 4H-SiC(0001) induced by KrF excimer laser irradiation to a SiN x film. The SiN x film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. Laser beam size on the sample surface was 300 μm×300 μm. Irradiation fluence was 1.0 J/cm 2 -4.0 J/cm 2 , and the number of shots was from 1 shot to 30 shots. Laser irradiation was performed in a vacuum chamber to avoid oxidation of the SiC surface. High concentration nitrogen doping (∼1×10 21 /cm 3 at the surface) and very low contact resistance with ohmic I-V characteristics can be achieved by laser ablation of the SiN x film. In the case of laser irradiation at the fluence of 2.0 J/cm 2 , the SiN x film was almost ablated without laser ablation of the SiC substrate. Then, excellent ohmic contact characteristics was obtained at the irradiation number of 5 shots, and it was hardly deteriorated up to 30 shots. In the case of irradiation fluence above 3.0 J/cm 2 , ablation of the SiC substrates was induced and ohmic contact characteristics were deteriorated with increasing the number of shots. From these results, we conclude that excellent ohmic contact characteristics without irradiation damage to SiC substrates can be obtained in a stable.

UR - http://www.scopus.com/inward/record.url?scp=84981229374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981229374&partnerID=8YFLogxK

U2 - 10.1117/12.2212021

DO - 10.1117/12.2212021

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Laser 3D Manufacturing III

A2 - Pique, Alberto

A2 - Gu, Bo

A2 - Helvajian, Henry

PB - SPIE

ER -