Improvement of breakdown characteristics of the gate oxynitride using N2O

Akihiro Ikeda, Chika Fujiki, Yukinori Kuroki

研究成果: Contribution to journalArticle査読

抄録

Charge trapping and dielectric breakdown (Qbd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N2O. The gate voltage shift (ΔVG) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N2O can reduce ΔVG resulting from the reduction of trapped electrons. Oxynitridation characteristics in N2O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.

本文言語英語
ページ(範囲)179-184
ページ数6
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
3
2
出版ステータス出版済み - 1998
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(その他)
  • 電子工学および電気工学
  • ハードウェアとアーキテクチャ

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