Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

Shinya Kato, Yasuyoshi Kurokawa, Shinsuke Miyajima, Yuya Watanabe, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: ジャーナルへの寄稿レター

18 引用 (Scopus)

抄録

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

元の言語英語
ページ(範囲)1-8
ページ数8
ジャーナルNanoscale Research Letters
8
発行部数1
DOI
出版物ステータス出版済み - 11 14 2013
外部発表Yes

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Atomic layer deposition
Silicon
atomic layer epitaxy
diffusion length
Nanowires
nanowires
silicon
Passivation
passivity
minority carriers
Solar cells
solar cells
Annealing
annealing
Carrier lifetime
Aluminum Oxide
carrier lifetime
high aspect ratio
simulators
Oxide films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

これを引用

Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition. / Kato, Shinya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Watanabe, Yuya; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

:: Nanoscale Research Letters, 巻 8, 番号 1, 14.11.2013, p. 1-8.

研究成果: ジャーナルへの寄稿レター

Kato, Shinya ; Kurokawa, Yasuyoshi ; Miyajima, Shinsuke ; Watanabe, Yuya ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition. :: Nanoscale Research Letters. 2013 ; 巻 8, 番号 1. pp. 1-8.
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abstract = "To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.",
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AU - Kato, Shinya

AU - Kurokawa, Yasuyoshi

AU - Miyajima, Shinsuke

AU - Watanabe, Yuya

AU - Yamada, Akira

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2013/11/14

Y1 - 2013/11/14

N2 - To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

AB - To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

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