Boron-doped hydrogenated amorphous carbon thin films were synthesized with plasma-enhanced CVD method. Electrochemical properties of B-doped DLC surface that can be useful in the application as an electrochemical sensor were investigated. B-doped DLC films deposited in this study possessed a B/C ratio of 0.013 and contained sp3-bonded carbons with atomic ratio of 22/78 (sp3/sp2). The electrical resistivity was 0.9147 Ω cm. B-doped DLC thin films exhibited a wide working potential range over 3 V, low double-layer capacitance, high resistance to electrochemically induced corrosion in strong acid media, and reversible electron transfer kinetics for inorganic redox analytes (Fe(CN)63-/4- and Ru(NH 3)62+/3+, which were on the same level as those of BDD. The redox reaction of Ce3+/4+ with standard potential higher than H2O/O2 was observed due to the wider potential window.