Improvement of conductivity by incorporation of boron atoms in hydrogenated amorphous carbon films fabricated by plasma CVD methods and its electrochemical properties

Hiroshi Naragino, Kohsuke Yoshinaga, Seiji Tatsuta, Kensuke Honda

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

Boron-doped hydrogenated amorphous carbon thin films were synthesized with plasma-enhanced CVD method. Electrochemical properties of B-doped DLC surface that can be useful in the application as an electrochemical sensor were investigated. B-doped DLC films deposited in this study possessed a B/C ratio of 0.013 and contained sp3-bonded carbons with atomic ratio of 22/78 (sp3/sp2). The electrical resistivity was 0.9147 Ω cm. B-doped DLC thin films exhibited a wide working potential range over 3 V, low double-layer capacitance, high resistance to electrochemically induced corrosion in strong acid media, and reversible electron transfer kinetics for inorganic redox analytes (Fe(CN)63-/4- and Ru(NH 3)62+/3+, which were on the same level as those of BDD. The redox reaction of Ce3+/4+ with standard potential higher than H2O/O2 was observed due to the wider potential window.

本文言語英語
ホスト出版物のタイトルSensors, Actuators, and Microsystems (General) - 220th ECS Meeting
ページ59-68
ページ数10
20
DOI
出版ステータス出版済み - 2012
外部発表はい
イベントSensors, Actuators, and Microsystems General Session - 220th ECS Meeting - Boston, MA, 米国
継続期間: 10 9 201110 14 2011

出版物シリーズ

名前ECS Transactions
番号20
41
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

会議

会議Sensors, Actuators, and Microsystems General Session - 220th ECS Meeting
Country米国
CityBoston, MA
Period10/9/1110/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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