IMPROVEMENT OF CRYSTALLINE QUALITY IN THE Si/CaF//2/Si STRUCTURE BY ION IMPLANTATION AND SOLID PHASE RECRYSTALLIZATION.

T. Asano, K. Orihara, H. Ishiwara, S. Furukawa

研究成果: Contribution to conferencePaper査読

抄録

Crystalline Si films formed on composite insulator/Si structures are of great interest in fabrication of three dimensional integrated circuits. In this work, solid phase recrystallization of ion implanted amorphous Si is introduced to the Si/CaF//2/Si structure in order to improve the crystalline quality of the top Si film. It is shown that crystalline quality improvement can be realized in the Si films formed on Si(100) substrates, but not in the Si films formed on Si(111) substrates.

本文言語英語
ページ423-424
ページ数2
出版ステータス出版済み - 12 1 1982
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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