TY - JOUR
T1 - Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing
AU - Nakamura, Daisuke
AU - Tetsuyama, Norihiro
AU - Shimogaki, Tetsuya
AU - Higashihata, Mitsuhiro
AU - Okada, Tatsuo
PY - 2014
Y1 - 2014
N2 - We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.
AB - We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.
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U2 - 10.2961/jlmn.2014.03.0005
DO - 10.2961/jlmn.2014.03.0005
M3 - Article
AN - SCOPUS:84912125297
SN - 1880-0688
VL - 9
SP - 209
EP - 212
JO - Journal of Laser Micro Nanoengineering
JF - Journal of Laser Micro Nanoengineering
IS - 3
ER -