Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

研究成果: Contribution to journalArticle査読

本文言語英語
ページ(範囲)2357-2360
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
4
出版ステータス出版済み - 4 30 2005

引用スタイル