Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs

Wataru Saito, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

A new MOS-gate structure was proposed and demonstrated to improve the switching trade-off characteristics between noise and loss in high-voltage MOSFETs. The lightly p-doped dummy base layer under the gate electrode modulates Cgd-Vds curve due to the depletion under high applied voltage and the turn-off dV/dt can be suppressed even with high-speed switching. The fabricated device showed the surge voltage suppression of 50 V or the turn-off loss reduction of 20% in the turn-off switching test with an inductive load. In the flyback converter operation, it was also shown that the trade-off characteristics between the radiation noise and total power loss were improved by the proposed dummy base structure.

本文言語英語
ホスト出版物のタイトルISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
ページ316-319
ページ数4
DOI
出版ステータス出版済み - 12 1 2011
外部発表はい
イベント23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, 米国
継続期間: 5 23 20115 26 2011

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

会議

会議23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
国/地域米国
CitySan Diego, CA
Period5/23/115/26/11

All Science Journal Classification (ASJC) codes

  • 工学(全般)

フィンガープリント

「Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル