Thick and high quality GaN layer growth using periodic insertion of low-temperature (LT)-grown GaN buffer layers was investigated by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE). Both morphological and optical properties of GaN epitaxial layers were drastically improved by inserting a second LT-GaN buffer layer. Also, the thickness of the second buffer layer was found to affect the quality of subsequently grown epitaxial layers. The full-width at half maximum (FWHM) value of X-ray diffraction for (10 1̄ 0) plane (φ scan) of the GaN layer with double buffer layer structure decreased to 608 arcsec whereas that with single buffer structure was 3600 arcsec. These results indicate that the free-standing GaN substrate with low dislocation density can be possible by reiterating the growth sequence of buffer layer and epitaxial layer.
|ジャーナル||Physica Status Solidi C: Conferences|
|出版ステータス||出版済み - 12 1 2003|
|イベント||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本|
継続期間: 5 25 2003 → 5 30 2003
All Science Journal Classification (ASJC) codes