Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers

H. Murakami, N. Kawaguchi, Y. Kangawa, Y. Kumagai, A. Koukitu

研究成果: Contribution to journalConference article査読

抄録

Thick and high quality GaN layer growth using periodic insertion of low-temperature (LT)-grown GaN buffer layers was investigated by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE). Both morphological and optical properties of GaN epitaxial layers were drastically improved by inserting a second LT-GaN buffer layer. Also, the thickness of the second buffer layer was found to affect the quality of subsequently grown epitaxial layers. The full-width at half maximum (FWHM) value of X-ray diffraction for (10 1̄ 0) plane (φ scan) of the GaN layer with double buffer layer structure decreased to 608 arcsec whereas that with single buffer structure was 3600 arcsec. These results indicate that the free-standing GaN substrate with low dislocation density can be possible by reiterating the growth sequence of buffer layer and epitaxial layer.

本文言語英語
ページ(範囲)2141-2144
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
7
DOI
出版ステータス出版済み - 12 1 2003
外部発表はい
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本
継続期間: 5 25 20035 30 2003

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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